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An X-band Low-power and Low-phase-noise Vco Using Bondwire Inductor : Volume 7, Issue 17 (19/05/2009)

By Hu, K.

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Book Id: WPLBN0003986721
Format Type: PDF Article :
File Size: Pages 5
Reproduction Date: 2015

Title: An X-band Low-power and Low-phase-noise Vco Using Bondwire Inductor : Volume 7, Issue 17 (19/05/2009)  
Author: Hu, K.
Volume: Vol. 7, Issue 17
Language: English
Subject: Science, Advances, Radio
Collections: Periodicals: Journal and Magazine Collection, Copernicus GmbH
Historic
Publication Date:
2009
Publisher: Copernicus Gmbh, Göttingen, Germany
Member Page: Copernicus Publications

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Herzel, F., Scheytt, J. C., & Hu, K. (2009). An X-band Low-power and Low-phase-noise Vco Using Bondwire Inductor : Volume 7, Issue 17 (19/05/2009). Retrieved from http://ebook.worldlibrary.net/


Description
Description: IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany. In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 Μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.

Summary
An X-Band low-power and low-phase-noise VCO using bondwire inductor

Excerpt
Follmann, R., Köther, D., Kohl, T., Engels, M., Podrebersek, T., Heyer, V., Schmalz, K., Herzel, F., Winkler, W., Osmany, S., and Jagdhold, U.: A single SiGe chip fractional-N 275 MHz\ldots20 GHz PLL with integrated 20 GHz VCO, IEEE MTT-S International Microwave Symposium, Atlanta, 355–358, June, 2008.; Hegazi, E., Sjoland, H., and Abidi, A.: A Filtering Technique to Lower Oscillator Phase Noise, IEEE International Solid-State Circuits Conference, 364–365, 2001.; Jacobsson, H., Hansson, B., Berg, H., and Gevorgian, S.: Very Low Phase-Noise Fully-Integrated Coupled VCOs, Radio Frequency Integrated Circuits Symposium, 467–470, 2002.; Bao, M., Li, Y., and Jacobsson, H.: A 21.5/43 GHz Dual-Frequency Balanced Colpitts VCO in SiGe Technology, IEEE Journal of Solid-State Circuits, 1352–1355, 2004.; Zirath, H., Jacobsson, H., Bao, M., Ferndahl, M., and Kozhuharov, R.: MMIC-Oscillator Designs for Ultra Low Phase Noise, IEEE Compound Semiconductor Integrated Circuit Symposium, 204–207, 2005.; Ferndahl, M. and Zirath, H.: Broadband 7GHz VCO in mHEMT Technology, in: Proc. Asia-Pacific Microwave Conference, 4, December, 2005.; Craninckx, J. and Steyaert, M.: A 1.8-GHz CMOS low-phase-noise voltage-controlled oscillator with prescaler, IEEE Journal of Solid-State Circuits, 1474–1482, December, 1995.; Kim, K., Ahn, K. H., and Lim, T. H.: Low Phase Noise Bond Wire VCO for DVB-H, 4th IEEE International Symposium on Electronic Design, Test and Applications, 103–106, 2008.; Craninckx, J., Steyaert, M., and Miyakawa, H.: A Fully Integrated Spiral-LC CMOS VCO Set with Prescaler for GSM and DCS-1800 Systems, in: Proc. IEEE Custom Integrated Circuits Conference, 403–406, 1997.; Tiebout, M.: Low Power VCO Design in CMOS, Springer Berlin Heidelberg, 11 and 74, 2006.; Rael, J. J. and Abidi, A. A.: Physical Process of Phase Noise in Differential LC Oscillators, in: Proc. Custom Integrated Circuit Conference, 569–572, May, 2000.; Muer, B. D., Borremans, M., Steyaert, M., and Puma, G. L.: A 2-GHz Low-Phase Noise Integrated LC-VCO Set With Flicker-Noise Upconversion Mechanism, IEEE j. Solid-State Circuits, 1034–1038, July, 2000.; Hegazi, E., Sjoland, H., and Abidi, A: A Filtering Technique to Lower Qscillator Phase Noise, ISSCC, Session 24, 23.4, 2001.; Masini, L., Pozzoni, M., Caliumi, A., Tomasini, L., Morigi, D., and Lemaire, F.: A Fully Integrated Silicon-Germanium X-Band VCO, online available: http://amsacta.cib.unibo.it/archive/00000048/0 1/G_13_2.pdf, 2001.; Heinemann, B., Barth, R., Bolze, D., Drews, J., and Formanek, P.: A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs, IEEE International Electron Devices Meeting, 5.2.1–5.2.4, 2003.; Niu, G.: Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implementations, in: Proc. IEEE, 93, 1583–1597, 2005.; Cressler, J. D.: SiGe HBT technology: a New Contender for Si based RF and Microwave Circuit Applications, IEEE Transactions on Microwave Theory and Techniques, 46, 572–589, 1998.

 

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